Samsung zHBM: Direct 3D DRAM Stacking Replaces Silicon Interposers

2026-08-26

Samsung detailed its vision for evolving HBM base dies from passive interposers into active logic, culminating in "zHBM." By using hybrid copper bonding to mount DRAM stacks directly onto the processor die, the architecture removes power-hungry SERDES layers, cutting package power by ~100W on a 1,200W accelerator while boosting memory bandwidth.